*p\o50RIA series medium power thyristors features high current rating excellent dynamic characteristics dv/dt = 1ooowus option superior surge capabilities standard package metric threads version available types up to 1600v vdrm/vrrm stud version 50 a typical applications phase control applications in converters lighting circuits battery charges regulated power supplies and temperature and speed control circuit can be supplied to meet stringent military, aerospace and other high-reliability requirements major ratings and characteristics parameters r(av| @tc 'tirmsi it3m @50hz @60hz i2t @50hz @60hz w /w vorm'vrrm tq typical l 50RIA 10 to 120 50 94 80 1430 1490 10,18 9.30 100(0 1200 140 to 160 50 90 80 1200 1257 7.21 6.58 1400to 1600 110 -40 to 125 units a c a a a ka2s ka2s v ms c s. i case style to-208ac (to-65) e e tri a spe voltage ratings i atio s type number 50RIA voltage code 10 20 40 60 ao 100 120 140 160 vrwvrrm> max- repetitive peak and off-stale voltage (1) v 100 200 400 600 800 1000 1200 1400 1600 vrsm , maximum non- repetitive peak voltage (2) v 150 300 500 700 900 1100 1300 1500 1700 'orm^rrm max' @ tj = tj max ma 15 (1) unils may be broken over non-repelitively in the off-slate direction without damage, if dl/dt does not exceed (2) for voltage pulses with t 5 5ms nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information turnished hy nj semi-cnnductors is helieved to he both accurate and reliable at the time uf going to press. however n.i semi-c onduclors assumes no responsibility tor any errors or omissions discovered in its use. nj semi-cuiuluctors encourages customers to ventv thai datasheets are current before placing orders.
on-state conduction parameter it max. average on-state current @ case temperature w) max. rms on-state current itsm max. peak, one-cyde non-repetitive surge current i2t maximum ft for fusing i2!/! maximum wt for fusing vt(to|1 low level value of threshold voltage vt(toj2 high level value of threshold voltage rn low level value of on-state slope resistance r,2 high level value of on-state slope resistance vru max. on-state voltage ih maximum holding current il latching current 50RIA 1010120 50 94 80 1430 1490 1200 1255 10.18 9.30 7.20 656 101.8 0.94 1.08 4.08 3,34 1.60 140to160 50 90 80 1200 1257 1010 1057 7.21 6.58 5.10 4.65 72.1 1.02 1 17 4.78 3.97 1.78 200 400 units a ?c a a ka2s ka^s v mil v ma conditions 160' sinusoidal conduction t ~ 10ms no voltage t = 8.3ms reappiied t = 10ms 100% vrrm 1 - 8.3ms reappiied sinusoidal half wave, t = 10ms no voltage initial t, = t, max. t = 8 3ms reappiied t = 10ms 100% vrrm t = 8.3ms reappiied t = 0.1 to 10ms, no voltage reappiied, tj = tj max. (1 6.7% x n x it(av) < i < n x it(av)), tj - t, max. (iixlt(av)50RIA 200 100 0.9 110 units a/us us conditions tc = 125'c,vdm = rated vdrm gate pulse = 20v, 15n, t = 6us, tf = 0.1us max itm = (2x rated di/dt) a tc = 25t vdm = rated vdru lu = 10a dc resistive circuit gate pulse - 10v, 15n source, tn = 20ps tc = 125'c, itu = 50a. reappiied dv/dt = 20v/us dir/dt = -10a/ms, vr=50v blocking parameter dv/dt max. critical rate of rise of off-state voltage 50RIA 200 soon units v/ms conditions tj = tj max. linear to 100% rated vdrm tj = tj max. linear to 67% rated vorm (?) available with dv/dt = 1000v/ms. to complete code add s90 i.e. 50RIA160s90.
triggering parameter pgm maximum peak gate power pg{av. maximum average gate power igm max. peak positive gate current +vgm maximum peak positive gate voltage -vgm maximum peak negative gate voltage igt dc gate current required to trigger vgt dc gate voltage required to (rigger igd dc gate current not to trigger vgo dc gate voltage not to trigger 50RIA 10 2.5 2.5 20 10 250 50 3.5 rn> 5.0 0.2 l units w a v ma v ma v conditions tj = tj max, t s 5ms tj = - 40'c ?,,r max. required gate trigger j ~ current/voltage are the tj = 1 25"c lowest value which will trigger j "" applied tj = 25'c t = t max wax- 9a(e current/ voltage not to vj crated voltage lr'9ger 's the max. value which tj = tj max vorm anode-to-calhode applied thermal and mechanical specification parameter tj max. operating temperature range t,,,, max. storaga temperature range sig rlh ,? max. thermal resistance, ihjc ' junction to case r(hcs max. thermal resistance, case lo heatstnk t mounting torque min. max. wt approximate weight case style 50RIA -40to125 -40 to 125 0.35 0,25 2.8 (25) 3.4(30) 28(10) units ?c ?c k/w k/w nm (ibf-in) g(oz) to-208ac (to-65) conditions dc operation mounting surface, smooth, flat and greased non-lubricated threads see outline table ar(hjc conduction (the following table shows the increment of thermal resistance r(uc when devices operate at different conduction angles than dc) conduction angle 180' 120 90' 60* 30' sinusoidal conduction 0.078 0.094 0.120 0.176 0.294 rectangular conduction 0.057 0.098 0.130 0.183 0.296 units k/w conditions tj = tj max. ordering information table de i e ode 50 i ria i 0 i s 0 i m current code essential part number voltage code: coda x 10 = vrrm(see voltage rating table) critical dv/dt: none = 500v/us (standard value) s90 = 1000v/us (special selection) none = stud base to-208ac (to-65) 1/4" 28unf-2a m = stud base to-208ac (to-65) m6 x 1
outline table ~ 10.59 dia) ft la 1/ |
